SI8413DB-T1-E1 by Vishay Intertech – Specifications

Vishay Intertech SI8413DB-T1-E1 is a SI8413DB-T1-E1 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 4.8A 1.47W 48mΩ@1A,4.5V 1.4V@250uA 1PCSPChannel XFBGA-4 MOSFETs ROHS. This product comes in a XFBGA-4 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 4.8A
  • Power Dissipation (Pd): 1.47W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 48mΩ@1A,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
  • Type: 1PCSPChannel
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of SI8413DB-T1-E1

Model NumberSI8413DB-T1-E1
Model NameVishay Intertech SI8413DB-T1-E1
CategoryMOSFETs
BrandVishay Intertech
Description20V 4.8A 1.47W 48mΩ@1A,4.5V 1.4V@250uA 1PCSPChannel XFBGA-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseXFBGA-4
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)4.8A
Power Dissipation (Pd)1.47W
Drain Source On Resistance (RDS(on)@Vgs,Id)48mΩ@1A,4.5V
Gate Threshold Voltage (Vgs(th)@Id)1.4V@250uA
Type1PCSPChannel
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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