SI8416DB-T2-E1 by Vishay Intertech – Specifications

Vishay Intertech SI8416DB-T2-E1 is a SI8416DB-T2-E1 from Vishay Intertech, part of the MOSFETs. It is designed for 8V 16A 23mΩ@1.5A,4.5V 800mV@250uA 1PCSNChannel MicroFoot-6 MOSFETs ROHS. This product comes in a MicroFoot-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 8V
  • Continuous Drain Current (Id): 16A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 23mΩ@1.5A,4.5V
  • Power Dissipation (Pd): 2.77W;13W
  • Gate Threshold Voltage (Vgs(th)@Id): 800mV@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.47nF@4V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.152 grams.

More on SI8416DB-T2-E1

Full Specifications of SI8416DB-T2-E1

Model NumberSI8416DB-T2-E1
Model NameVishay Intertech SI8416DB-T2-E1
CategoryMOSFETs
BrandVishay Intertech
Description8V 16A 23mΩ@1.5A,4.5V 800mV@250uA 1PCSNChannel MicroFoot-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.152 grams / 0.005362 oz
Package / CaseMicroFoot-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)8V
Continuous Drain Current (Id)16A
Drain Source On Resistance (RDS(on)@Vgs,Id)23mΩ@1.5A,4.5V
Power Dissipation (Pd)2.77W;13W
Gate Threshold Voltage (Vgs(th)@Id)800mV@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.47nF@4V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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