SI8424CDB-T1-E1 by Vishay Intertech – Specifications

Vishay Intertech SI8424CDB-T1-E1 is a SI8424CDB-T1-E1 from Vishay Intertech, part of the MOSFETs. It is designed for 8V 6.3A 20mΩ@4.5V,2A 800mV@250uA 1PCSNChannel UFBGA-4 MOSFETs ROHS. This product comes in a UFBGA-4 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 8V
  • Continuous Drain Current (Id): 6.3A
  • Power Dissipation (Pd): 1.1W;2.7W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@4.5V,2A
  • Gate Threshold Voltage (Vgs(th)@Id): 800mV@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.34nF@4V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.133 grams.

Full Specifications of SI8424CDB-T1-E1

Model NumberSI8424CDB-T1-E1
Model NameVishay Intertech SI8424CDB-T1-E1
CategoryMOSFETs
BrandVishay Intertech
Description8V 6.3A 20mΩ@4.5V,2A 800mV@250uA 1PCSNChannel UFBGA-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.133 grams / 0.004691 oz
Package / CaseUFBGA-4
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)8V
Continuous Drain Current (Id)6.3A
Power Dissipation (Pd)1.1W;2.7W
Drain Source On Resistance (RDS(on)@Vgs,Id)20mΩ@4.5V,2A
Gate Threshold Voltage (Vgs(th)@Id)800mV@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.34nF@4V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SI8424CDB-T1-E1 With Other 200 Models

Related Models - SI8424CDB-T1-E1 Alternative

Scroll to Top