SI8425DB-T1-E1 by Vishay Intertech – Specifications

Vishay Intertech SI8425DB-T1-E1 is a SI8425DB-T1-E1 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 5.9A 23mΩ@2A,4.5V 900mV@250uA 1PCSPChannel WLCSP-4(1.6x1.6) MOSFETs ROHS. This product comes in a WLCSP-4(1.6x1.6) package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 20V
• Continuous Drain Current (Id): 5.9A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 23mΩ@2A,4.5V
• Power Dissipation (Pd): 1.1W;2.7W
• Gate Threshold Voltage (Vgs(th)@Id): 900mV@250uA
• Type: 1PCSPChannel
• Input Capacitance (Ciss@Vds): 2.8nF@10V
• Total Gate Charge (Qg@Vgs): 110nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.