SI8466EDB-T2-E1 by Vishay Intertech – Specifications

Vishay Intertech SI8466EDB-T2-E1 is a SI8466EDB-T2-E1 from Vishay Intertech, part of the MOSFETs. It is designed for 8V 3.6A 43mΩ@2A,4.5V 700mV@250uA 1PCSNChannel UFBGA-4 MOSFETs ROHS. This product comes in a UFBGA-4 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 8V
  • Continuous Drain Current (Id): 3.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 43mΩ@2A,4.5V
  • Power Dissipation (Pd): 780mW;1.8W
  • Gate Threshold Voltage (Vgs(th)@Id): 700mV@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 710pF@4V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SI8466EDB-T2-E1

Full Specifications of SI8466EDB-T2-E1

Model NumberSI8466EDB-T2-E1
Model NameVishay Intertech SI8466EDB-T2-E1
CategoryMOSFETs
BrandVishay Intertech
Description8V 3.6A 43mΩ@2A,4.5V 700mV@250uA 1PCSNChannel UFBGA-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseUFBGA-4
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)8V
Continuous Drain Current (Id)3.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)43mΩ@2A,4.5V
Power Dissipation (Pd)780mW;1.8W
Gate Threshold Voltage (Vgs(th)@Id)700mV@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)710pF@4V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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