SI8483DB-T2-E1 by Vishay Intertech – Specifications

Vishay Intertech SI8483DB-T2-E1 is a SI8483DB-T2-E1 from Vishay Intertech, part of the MOSFETs. It is designed for 12V 16A 26mΩ@4.5V,1.5A 800mV@250uA 1PCSPChannel BGA-6 MOSFETs ROHS. This product comes in a BGA-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 12V
  • Continuous Drain Current (Id): 16A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 26mΩ@4.5V,1.5A
  • Power Dissipation (Pd): 2.77W;13W
  • Gate Threshold Voltage (Vgs(th)@Id): 800mV@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.84nF@6V
  • Total Gate Charge (Qg@Vgs): 65nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.001 grams.

More on SI8483DB-T2-E1

Full Specifications of SI8483DB-T2-E1

Model NumberSI8483DB-T2-E1
Model NameVishay Intertech SI8483DB-T2-E1
CategoryMOSFETs
BrandVishay Intertech
Description12V 16A 26mΩ@4.5V,1.5A 800mV@250uA 1PCSPChannel BGA-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.001 grams / 0.000035 oz
Package / CaseBGA-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)12V
Continuous Drain Current (Id)16A
Drain Source On Resistance (RDS(on)@Vgs,Id)26mΩ@4.5V,1.5A
Power Dissipation (Pd)2.77W;13W
Gate Threshold Voltage (Vgs(th)@Id)800mV@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.84nF@6V
Total Gate Charge (Qg@Vgs)65nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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