SI8487DB-T1-E1 by Vishay Intertech – Specifications

Vishay Intertech SI8487DB-T1-E1 is a SI8487DB-T1-E1 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 4.9A 31mΩ@2A,10V 1.2V@250uA 1PCSPChannel UFBGA-4 MOSFETs ROHS. This product comes in a UFBGA-4 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 4.9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 31mΩ@2A,10V
  • Power Dissipation (Pd): 1.1W;2.7W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 2.24nF@15V
  • Total Gate Charge (Qg@Vgs): 80nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.056 grams.

More on SI8487DB-T1-E1

Full Specifications of SI8487DB-T1-E1

Model NumberSI8487DB-T1-E1
Model NameVishay Intertech SI8487DB-T1-E1
CategoryMOSFETs
BrandVishay Intertech
Description30V 4.9A 31mΩ@2A,10V 1.2V@250uA 1PCSPChannel UFBGA-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.056 grams / 0.001975 oz
Package / CaseUFBGA-4
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)4.9A
Drain Source On Resistance (RDS(on)@Vgs,Id)31mΩ@2A,10V
Power Dissipation (Pd)1.1W;2.7W
Gate Threshold Voltage (Vgs(th)@Id)1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)2.24nF@15V
Total Gate Charge (Qg@Vgs)80nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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