SI8489EDB-T2-E1 by Vishay Intertech – Specifications

Vishay Intertech SI8489EDB-T2-E1 is a SI8489EDB-T2-E1 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 3.06A 44mΩ@10V,1.5A 1.2V@250uA 1PCSPChannel UFBGA-4 MOSFETs ROHS. This product comes in a UFBGA-4 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 3.06A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 44mΩ@10V,1.5A
  • Power Dissipation (Pd): 780mW;1.8W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 765pF@10V
  • Total Gate Charge (Qg@Vgs): 27nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.011 grams.

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Full Specifications of SI8489EDB-T2-E1

Model NumberSI8489EDB-T2-E1
Model NameVishay Intertech SI8489EDB-T2-E1
CategoryMOSFETs
BrandVishay Intertech
Description20V 3.06A 44mΩ@10V,1.5A 1.2V@250uA 1PCSPChannel UFBGA-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.011 grams / 0.000388 oz
Package / CaseUFBGA-4
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)3.06A
Drain Source On Resistance (RDS(on)@Vgs,Id)44mΩ@10V,1.5A
Power Dissipation (Pd)780mW;1.8W
Gate Threshold Voltage (Vgs(th)@Id)1.2V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)765pF@10V
Total Gate Charge (Qg@Vgs)27nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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