SI8802DB-T2-E1 by Vishay Intertech – Specifications

Vishay Intertech SI8802DB-T2-E1 is a SI8802DB-T2-E1 from Vishay Intertech, part of the MOSFETs. It is designed for 8V 3A 54mΩ@1A,4.5V 500mW 700mV@250uA 1PCSNChannel XFBGA-4 MOSFETs ROHS. This product comes in a XFBGA-4 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 8V
  • Continuous Drain Current (Id): 3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 54mΩ@1A,4.5V
  • Power Dissipation (Pd): 500mW
  • Gate Threshold Voltage (Vgs(th)@Id): 700mV@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.023 grams.

More on SI8802DB-T2-E1

Full Specifications of SI8802DB-T2-E1

Model NumberSI8802DB-T2-E1
Model NameVishay Intertech SI8802DB-T2-E1
CategoryMOSFETs
BrandVishay Intertech
Description8V 3A 54mΩ@1A,4.5V 500mW 700mV@250uA 1PCSNChannel XFBGA-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.023 grams / 0.000811 oz
Package / CaseXFBGA-4
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)8V
Continuous Drain Current (Id)3A
Drain Source On Resistance (RDS(on)@Vgs,Id)54mΩ@1A,4.5V
Power Dissipation (Pd)500mW
Gate Threshold Voltage (Vgs(th)@Id)700mV@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SI8802DB-T2-E1 With Other 200 Models

Related Models - SI8802DB-T2-E1 Alternative

Scroll to Top