SI8810EDB-T2-E1 by Vishay Intertech – Specifications

Vishay Intertech SI8810EDB-T2-E1 is a SI8810EDB-T2-E1 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 2.1A 72mΩ@4.5V,1A 500mW 900mV@250uA 1PCSNChannel BGA-4 MOSFETs ROHS. This product comes in a BGA-4 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 2.1A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 72mΩ@4.5V,1A
  • Power Dissipation (Pd): 500mW
  • Gate Threshold Voltage (Vgs(th)@Id): 900mV@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 245pF@10V
  • Total Gate Charge (Qg@Vgs): 8nC@8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.11 grams.

More on SI8810EDB-T2-E1

Full Specifications of SI8810EDB-T2-E1

Model NumberSI8810EDB-T2-E1
Model NameVishay Intertech SI8810EDB-T2-E1
CategoryMOSFETs
BrandVishay Intertech
Description20V 2.1A 72mΩ@4.5V,1A 500mW 900mV@250uA 1PCSNChannel BGA-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.110 grams / 0.00388 oz
Package / CaseBGA-4
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)2.1A
Drain Source On Resistance (RDS(on)@Vgs,Id)72mΩ@4.5V,1A
Power Dissipation (Pd)500mW
Gate Threshold Voltage (Vgs(th)@Id)900mV@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)245pF@10V
Total Gate Charge (Qg@Vgs)8nC@8V
Operating Temperature-55℃~+150℃@(Tj)

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