SI8851EDB-T2-E1 by Vishay Intertech – Specifications

Vishay Intertech SI8851EDB-T2-E1 is a SI8851EDB-T2-E1 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 7.7A 8mΩ@7A,4.5V 660mW 1V@250uA 1PCSPChannel MicroFoot-30 MOSFETs ROHS. This product comes in a MicroFoot-30 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 7.7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@7A,4.5V
  • Power Dissipation (Pd): 660mW
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 6.9nF@10V
  • Total Gate Charge (Qg@Vgs): 180nC@8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SI8851EDB-T2-E1

Full Specifications of SI8851EDB-T2-E1

Model NumberSI8851EDB-T2-E1
Model NameVishay Intertech SI8851EDB-T2-E1
CategoryMOSFETs
BrandVishay Intertech
Description20V 7.7A 8mΩ@7A,4.5V 660mW 1V@250uA 1PCSPChannel MicroFoot-30 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseMicroFoot-30
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)7.7A
Drain Source On Resistance (RDS(on)@Vgs,Id)8mΩ@7A,4.5V
Power Dissipation (Pd)660mW
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)6.9nF@10V
Total Gate Charge (Qg@Vgs)180nC@8V
Operating Temperature-55℃~+150℃@(Tj)

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