SI9407BDY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI9407BDY-T1-GE3 is a SI9407BDY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 4.7A 120mΩ@10V,3.2A 3V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 4.7A
  • Power Dissipation (Pd): 2.4W;5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 120mΩ@10V,3.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 600pF@30V
  • Total Gate Charge (Qg@Vgs): 22nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.

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Full Specifications of SI9407BDY-T1-GE3

Model NumberSI9407BDY-T1-GE3
Model NameVishay Intertech SI9407BDY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 4.7A 120mΩ@10V,3.2A 3V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.245 grams / 0.008642 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)4.7A
Power Dissipation (Pd)2.4W;5W
Drain Source On Resistance (RDS(on)@Vgs,Id)120mΩ@10V,3.2A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)600pF@30V
Total Gate Charge (Qg@Vgs)22nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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