SI9933CDY-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI9933CDY-T1-E3 is a SI9933CDY-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 4A 58mΩ@4.5V,4.8A 3.1W 1.4V@250uA 2 P-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 58mΩ@4.5V,4.8A
  • Power Dissipation (Pd): 3.1W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
  • Type: 2 P-Channel
  • Input Capacitance (Ciss@Vds): 665pF@10V
  • Total Gate Charge (Qg@Vgs): 26nC@10V
  • Operating Temperature: -50℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.

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Full Specifications of SI9933CDY-T1-E3

Model NumberSI9933CDY-T1-E3
Model NameVishay Intertech SI9933CDY-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description20V 4A 58mΩ@4.5V,4.8A 3.1W 1.4V@250uA 2 P-Channel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.245 grams / 0.008642 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)4A
Drain Source On Resistance (RDS(on)@Vgs,Id)58mΩ@4.5V,4.8A
Power Dissipation (Pd)3.1W
Gate Threshold Voltage (Vgs(th)@Id)1.4V@250uA
Type2 P-Channel
Input Capacitance (Ciss@Vds)665pF@10V
Total Gate Charge (Qg@Vgs)26nC@10V
Operating Temperature-50℃~+150℃@(Tj)

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