SI9945BDY-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI9945BDY-T1-GE3 is a SI9945BDY-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 5.3A 3.1W 72mΩ@4.5V,3.9A 3V@250uA 2 N-Channel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 5.3A
  • Power Dissipation (Pd): 3.1W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 72mΩ@4.5V,3.9A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 665pF@15V
  • Total Gate Charge (Qg@Vgs): 20nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.248 grams.

Full Specifications of SI9945BDY-T1-GE3

Model NumberSI9945BDY-T1-GE3
Model NameVishay Intertech SI9945BDY-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 5.3A 3.1W 72mΩ@4.5V,3.9A 3V@250uA 2 N-Channel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.248 grams / 0.008748 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)5.3A
Power Dissipation (Pd)3.1W
Drain Source On Resistance (RDS(on)@Vgs,Id)72mΩ@4.5V,3.9A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)665pF@15V
Total Gate Charge (Qg@Vgs)20nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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