SIA429DJT-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIA429DJT-T1-GE3 is a SIA429DJT-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 12A 3.5W 20.5mΩ@4.5V,6A 1V@250uA 1PCSPChannel PowerPAK-SC-70-6 MOSFETs ROHS. This product comes in a PowerPAK-SC-70-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 12A
  • Power Dissipation (Pd): 3.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 20.5mΩ@4.5V,6A
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.057 grams.

More on SIA429DJT-T1-GE3

Full Specifications of SIA429DJT-T1-GE3

Model NumberSIA429DJT-T1-GE3
Model NameVishay Intertech SIA429DJT-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 12A 3.5W 20.5mΩ@4.5V,6A 1V@250uA 1PCSPChannel PowerPAK-SC-70-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.057 grams / 0.002011 oz
Package / CasePowerPAK-SC-70-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)12A
Power Dissipation (Pd)3.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)20.5mΩ@4.5V,6A
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type1PCSPChannel

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