SIA430DJ-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIA430DJ-T1-GE3 is a SIA430DJ-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 12A 13.5mΩ@10V,7A 19.2W 3V@250uA 1PCSNChannel PowerPAK-SC-70-6 MOSFETs ROHS. This product comes in a PowerPAK-SC-70-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 12A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 13.5mΩ@10V,7A
  • Power Dissipation (Pd): 19.2W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 5.45 grams.

More on SIA430DJ-T1-GE3

Full Specifications of SIA430DJ-T1-GE3

Model NumberSIA430DJ-T1-GE3
Model NameVishay Intertech SIA430DJ-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 12A 13.5mΩ@10V,7A 19.2W 3V@250uA 1PCSNChannel PowerPAK-SC-70-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:5.450 grams / 0.192243 oz
Package / CasePowerPAK-SC-70-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)12A
Drain Source On Resistance (RDS(on)@Vgs,Id)13.5mΩ@10V,7A
Power Dissipation (Pd)19.2W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel

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