SIA436DJ-T4-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIA436DJ-T4-GE3 is a SIA436DJ-T4-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 8V 12A 9.4mΩ@15.7A,4.5V 800mV@250uA 1PCSNChannel PowerPAK-SC-70-6 MOSFETs ROHS. This product comes in a PowerPAK-SC-70-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 8V
  • Continuous Drain Current (Id): 12A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.4mΩ@15.7A,4.5V
  • Power Dissipation (Pd): 3.5W;19W
  • Gate Threshold Voltage (Vgs(th)@Id): 800mV@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.508nF@4V
  • Total Gate Charge (Qg@Vgs): 25.2nC@5V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SIA436DJ-T4-GE3

Full Specifications of SIA436DJ-T4-GE3

Model NumberSIA436DJ-T4-GE3
Model NameVishay Intertech SIA436DJ-T4-GE3
CategoryMOSFETs
BrandVishay Intertech
Description8V 12A 9.4mΩ@15.7A,4.5V 800mV@250uA 1PCSNChannel PowerPAK-SC-70-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK-SC-70-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)8V
Continuous Drain Current (Id)12A
Drain Source On Resistance (RDS(on)@Vgs,Id)9.4mΩ@15.7A,4.5V
Power Dissipation (Pd)3.5W;19W
Gate Threshold Voltage (Vgs(th)@Id)800mV@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.508nF@4V
Total Gate Charge (Qg@Vgs)25.2nC@5V
Operating Temperature-55℃~+150℃@(Tj)

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