SIA444DJT-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIA444DJT-T1-GE3 is a SIA444DJT-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 12A 19W 17mΩ@10V,7.4A 2.2V@250uA 1PCSNChannel PowerPAK-SC-70-6 MOSFETs ROHS. This product comes in a PowerPAK-SC-70-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 12A
  • Power Dissipation (Pd): 19W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 17mΩ@10V,7.4A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.135 grams.

More on SIA444DJT-T1-GE3

Full Specifications of SIA444DJT-T1-GE3

Model NumberSIA444DJT-T1-GE3
Model NameVishay Intertech SIA444DJT-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 12A 19W 17mΩ@10V,7.4A 2.2V@250uA 1PCSNChannel PowerPAK-SC-70-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.135 grams / 0.004762 oz
Package / CasePowerPAK-SC-70-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)12A
Power Dissipation (Pd)19W
Drain Source On Resistance (RDS(on)@Vgs,Id)17mΩ@10V,7.4A
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel

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