SIA456DJ-T3-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIA456DJ-T3-GE3 is a SIA456DJ-T3-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 200V 1.38Ω@750mA,4.5V 1.4V@250uA 1PCSNChannel PowerPAK-SC-70-6 MOSFETs ROHS. This product comes in a PowerPAK-SC-70-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 1.1A;2.6A
  • Power Dissipation (Pd): 3.5W;19W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.38Ω@750mA,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 350pF@100V
  • Total Gate Charge (Qg@Vgs): 14.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SIA456DJ-T3-GE3

Full Specifications of SIA456DJ-T3-GE3

Model NumberSIA456DJ-T3-GE3
Model NameVishay Intertech SIA456DJ-T3-GE3
CategoryMOSFETs
BrandVishay Intertech
Description200V 1.38Ω@750mA,4.5V 1.4V@250uA 1PCSNChannel PowerPAK-SC-70-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK-SC-70-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)1.1A;2.6A
Power Dissipation (Pd)3.5W;19W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.38Ω@750mA,4.5V
Gate Threshold Voltage (Vgs(th)@Id)1.4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)350pF@100V
Total Gate Charge (Qg@Vgs)14.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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