SIA817EDJ-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIA817EDJ-T1-GE3 is a SIA817EDJ-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 4.5A 65mΩ@10V,3A 6.5W 1.3V@250uA 1PCSPChannel PowerPAK-SC-70-6 MOSFETs ROHS. This product comes in a PowerPAK-SC-70-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 4.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 65mΩ@10V,3A
  • Power Dissipation (Pd): 6.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.3V@250uA
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 5.45 grams.

More on SIA817EDJ-T1-GE3

Full Specifications of SIA817EDJ-T1-GE3

Model NumberSIA817EDJ-T1-GE3
Model NameVishay Intertech SIA817EDJ-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 4.5A 65mΩ@10V,3A 6.5W 1.3V@250uA 1PCSPChannel PowerPAK-SC-70-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:5.450 grams / 0.192243 oz
Package / CasePowerPAK-SC-70-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)4.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)65mΩ@10V,3A
Power Dissipation (Pd)6.5W
Gate Threshold Voltage (Vgs(th)@Id)1.3V@250uA
Type1PCSPChannel

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