SIA906EDJ-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIA906EDJ-T1-GE3 is a SIA906EDJ-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 4.5A 7.8W 46mΩ@4.5V,3.9A 1.4V@250uA 2 N-Channel WSON-6-EP(2x2) MOSFETs ROHS. This product comes in a WSON-6-EP(2x2) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 4.5A
  • Power Dissipation (Pd): 7.8W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 46mΩ@4.5V,3.9A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
  • Type: 2 N-Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 5.45 grams.

More on SIA906EDJ-T1-GE3

Full Specifications of SIA906EDJ-T1-GE3

Model NumberSIA906EDJ-T1-GE3
Model NameVishay Intertech SIA906EDJ-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 4.5A 7.8W 46mΩ@4.5V,3.9A 1.4V@250uA 2 N-Channel WSON-6-EP(2x2) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:5.450 grams / 0.192243 oz
Package / CaseWSON-6-EP(2x2)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)4.5A
Power Dissipation (Pd)7.8W
Drain Source On Resistance (RDS(on)@Vgs,Id)46mΩ@4.5V,3.9A
Gate Threshold Voltage (Vgs(th)@Id)1.4V@250uA
Type2 N-Channel

Compare Vishay Intertech - SIA906EDJ-T1-GE3 With Other 200 Models

Related Models - SIA906EDJ-T1-GE3 Alternative

Scroll to Top