SIA923EDJ-T4-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIA923EDJ-T4-GE3 is a SIA923EDJ-T4-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 4.5A 54mΩ@3.8A,4.5V 1.4V@250uA 2 P-Channel PowerPAK-SC-70-6-Dual MOSFETs ROHS. This product comes in a PowerPAK-SC-70-6-Dual package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 4.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 54mΩ@3.8A,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
  • Type: 2 P-Channel
  • Total Gate Charge (Qg@Vgs): 25nC@8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SIA923EDJ-T4-GE3

Model NumberSIA923EDJ-T4-GE3
Model NameVishay Intertech SIA923EDJ-T4-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 4.5A 54mΩ@3.8A,4.5V 1.4V@250uA 2 P-Channel PowerPAK-SC-70-6-Dual MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK-SC-70-6-Dual
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)4.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)54mΩ@3.8A,4.5V
Gate Threshold Voltage (Vgs(th)@Id)1.4V@250uA
Type2 P-Channel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)25nC@8V
Operating Temperature-55℃~+150℃@(Tj)

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