SIB422EDK-T4-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIB422EDK-T4-GE3 is a SIB422EDK-T4-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 30mΩ@5A,4.5V 1V@250uA 1PCSNChannel SC-75-6 MOSFETs ROHS. This product comes in a SC-75-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 7.1A;9A
  • Power Dissipation (Pd): 2.5W;13W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 30mΩ@5A,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): 18nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SIB422EDK-T4-GE3

Full Specifications of SIB422EDK-T4-GE3

Model NumberSIB422EDK-T4-GE3
Model NameVishay Intertech SIB422EDK-T4-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 30mΩ@5A,4.5V 1V@250uA 1PCSNChannel SC-75-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSC-75-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)7.1A;9A
Power Dissipation (Pd)2.5W;13W
Drain Source On Resistance (RDS(on)@Vgs,Id)30mΩ@5A,4.5V
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type1PCSNChannel
Total Gate Charge (Qg@Vgs)18nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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