SIDR5802EP-T1-RE3 by Vishay Intertech – Specifications

Vishay Intertech SIDR5802EP-T1-RE3 is a SIDR5802EP-T1-RE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 2.9mΩ@20A,10V 4V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 80V
• Continuous Drain Current (Id): 34.2A;153A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 2.9mΩ@20A,10V
• Power Dissipation (Pd): 7.5W;150W
• Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 3.02nF@40V
• Total Gate Charge (Qg@Vgs): 60nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.