SIDR638DP-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIDR638DP-T1-GE3 is a SIDR638DP-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 100A 0.88mΩ@20A,10V 125W 2.3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 100A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 0.88mΩ@20A,10V
  • Power Dissipation (Pd): 125W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 10.5nF@20V
  • Total Gate Charge (Qg@Vgs): 204nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.6 grams.

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Full Specifications of SIDR638DP-T1-GE3

Model NumberSIDR638DP-T1-GE3
Model NameVishay Intertech SIDR638DP-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 100A 0.88mΩ@20A,10V 125W 2.3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.600 grams / 0.021164 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)100A
Drain Source On Resistance (RDS(on)@Vgs,Id)0.88mΩ@20A,10V
Power Dissipation (Pd)125W
Gate Threshold Voltage (Vgs(th)@Id)2.3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)10.5nF@20V
Total Gate Charge (Qg@Vgs)204nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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