SIE802DF-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SIE802DF-T1-E3 is a SIE802DF-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 60A 1.9mΩ@23.6A,10V 2.7V@250uA 1PCSNChannel PolArPAK-10 MOSFETs ROHS. This product comes in a PolArPAK-10 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 60A
• Power Dissipation (Pd): 5.2W;125W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 1.9mΩ@23.6A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 2.7V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 7nF@15V
• Total Gate Charge (Qg@Vgs): 160nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.