SIE818DF-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIE818DF-T1-GE3 is a SIE818DF-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 75V 60A 9.5mΩ@16A,10V 3V@250uA 1PCSNChannel PolArPAK-10 MOSFETs ROHS. This product comes in a PolArPAK-10 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 75V
  • Continuous Drain Current (Id): 60A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.5mΩ@16A,10V
  • Power Dissipation (Pd): 5.2W;125W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.2nF@38V
  • Total Gate Charge (Qg@Vgs): 95nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SIE818DF-T1-GE3

Full Specifications of SIE818DF-T1-GE3

Model NumberSIE818DF-T1-GE3
Model NameVishay Intertech SIE818DF-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description75V 60A 9.5mΩ@16A,10V 3V@250uA 1PCSNChannel PolArPAK-10 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePolArPAK-10
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)75V
Continuous Drain Current (Id)60A
Drain Source On Resistance (RDS(on)@Vgs,Id)9.5mΩ@16A,10V
Power Dissipation (Pd)5.2W;125W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.2nF@38V
Total Gate Charge (Qg@Vgs)95nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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