SIHA6N80AE-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHA6N80AE-GE3 is a SIHA6N80AE-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 800V 5A 30W 950mΩ@2A,10V 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 5A
  • Power Dissipation (Pd): 30W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 950mΩ@2A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 422pF@100V
  • Total Gate Charge (Qg@Vgs): 22.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SIHA6N80AE-GE3

Full Specifications of SIHA6N80AE-GE3

Model NumberSIHA6N80AE-GE3
Model NameVishay Intertech SIHA6N80AE-GE3
CategoryMOSFETs
BrandVishay Intertech
Description800V 5A 30W 950mΩ@2A,10V 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)5A
Power Dissipation (Pd)30W
Drain Source On Resistance (RDS(on)@Vgs,Id)950mΩ@2A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)422pF@100V
Total Gate Charge (Qg@Vgs)22.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SIHA6N80AE-GE3 With Other 200 Models

Related Models - SIHA6N80AE-GE3 Alternative

Scroll to Top