SIHB120N60E-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHB120N60E-T1-GE3 is a SIHB120N60E-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 600V 25A 120mΩ@12A,10V 179W 5V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 600V
• Continuous Drain Current (Id): 25A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 120mΩ@12A,10V
• Power Dissipation (Pd): 179W
• Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 1.562nF@100V
• Total Gate Charge (Qg@Vgs): 45nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.