SIHB12N50C-E3 by Vishay Intertech – Specifications

Vishay Intertech SIHB12N50C-E3 is a SIHB12N50C-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 500V 12A 208W 555mΩ@4A,10V 5V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 500V
• Continuous Drain Current (Id): 12A
• Power Dissipation (Pd): 208W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 555mΩ@4A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 1.375nF@25V
• Total Gate Charge (Qg@Vgs): 48nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.