SIHB21N65EF-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHB21N65EF-GE3 is a SIHB21N65EF-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 650V 21A 180mΩ@11A,10V 208W 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 650V
• Continuous Drain Current (Id): 21A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 180mΩ@11A,10V
• Power Dissipation (Pd): 208W
• Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 2.322nF@100V
• Total Gate Charge (Qg@Vgs): 106nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.