SIHB22N60AE-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHB22N60AE-GE3 is a SIHB22N60AE-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 600V 20A 180mΩ@11A,10V 179W 4V@250uA 1PCSNChannel TO-263(D2PAk) MOSFETs ROHS. This product comes in a TO-263(D2PAk) package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 20A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 180mΩ@11A,10V
  • Power Dissipation (Pd): 179W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.451nF@100V
  • Total Gate Charge (Qg@Vgs): 96nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SIHB22N60AE-GE3

Model NumberSIHB22N60AE-GE3
Model NameVishay Intertech SIHB22N60AE-GE3
CategoryMOSFETs
BrandVishay Intertech
Description600V 20A 180mΩ@11A,10V 179W 4V@250uA 1PCSNChannel TO-263(D2PAk) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263(D2PAk)
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)20A
Drain Source On Resistance (RDS(on)@Vgs,Id)180mΩ@11A,10V
Power Dissipation (Pd)179W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.451nF@100V
Total Gate Charge (Qg@Vgs)96nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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