SIHB33N60ET1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHB33N60ET1-GE3 is a SIHB33N60ET1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 600V 33A 99mΩ@10V,16.5A 278W 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 33A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 99mΩ@10V,16.5A
  • Power Dissipation (Pd): 278W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.508nF@100V
  • Total Gate Charge (Qg@Vgs): 150nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.662 grams.

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Full Specifications of SIHB33N60ET1-GE3

Model NumberSIHB33N60ET1-GE3
Model NameVishay Intertech SIHB33N60ET1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description600V 33A 99mΩ@10V,16.5A 278W 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.662 grams / 0.058625 oz
Package / CaseD2PAK(TO-263)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)33A
Drain Source On Resistance (RDS(on)@Vgs,Id)99mΩ@10V,16.5A
Power Dissipation (Pd)278W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.508nF@100V
Total Gate Charge (Qg@Vgs)150nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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