SIHD12N50E-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHD12N50E-GE3 is a SIHD12N50E-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 550V 10.5A 380mΩ@10V,6A 114W 4V@250uA 1PCSNChannel TO-252-2(DPAK) MOSFETs ROHS. This product comes in a TO-252-2(DPAK) package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 550V
• Continuous Drain Current (Id): 10.5A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 380mΩ@10V,6A
• Power Dissipation (Pd): 114W
• Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 886pF@100V
• Total Gate Charge (Qg@Vgs): 50nC@10V
• Operating Temperature: -55℃~+150℃@(Ta)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.528 grams.