SIHD1K4N60E-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHD1K4N60E-GE3 is a SIHD1K4N60E-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 600V 4.2A 1.45Ω@500mA,10V 63W 5V@250uA 1PCSNChannel DPAK MOSFETs ROHS. This product comes in a DPAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 4.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.45Ω@500mA,10V
  • Power Dissipation (Pd): 63W
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 172pF@100V
  • Total Gate Charge (Qg@Vgs): 7.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SIHD1K4N60E-GE3

Full Specifications of SIHD1K4N60E-GE3

Model NumberSIHD1K4N60E-GE3
Model NameVishay Intertech SIHD1K4N60E-GE3
CategoryMOSFETs
BrandVishay Intertech
Description600V 4.2A 1.45Ω@500mA,10V 63W 5V@250uA 1PCSNChannel DPAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDPAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)4.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.45Ω@500mA,10V
Power Dissipation (Pd)63W
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)172pF@100V
Total Gate Charge (Qg@Vgs)7.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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