SIHD2N80E-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHD2N80E-GE3 is a SIHD2N80E-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 800V 2.8A 62.5W 2.75Ω@1A,10V 4V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS. This product comes in a TO-252AA package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 2.8A
  • Power Dissipation (Pd): 62.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.75Ω@1A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 315pF@100V
  • Total Gate Charge (Qg@Vgs): 19.6nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.624 grams.

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Full Specifications of SIHD2N80E-GE3

Model NumberSIHD2N80E-GE3
Model NameVishay Intertech SIHD2N80E-GE3
CategoryMOSFETs
BrandVishay Intertech
Description800V 2.8A 62.5W 2.75Ω@1A,10V 4V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.624 grams / 0.022011 oz
Package / CaseTO-252AA
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)2.8A
Power Dissipation (Pd)62.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)2.75Ω@1A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)315pF@100V
Total Gate Charge (Qg@Vgs)19.6nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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