SIHD3N50D-E3 by Vishay Intertech – Specifications

Vishay Intertech SIHD3N50D-E3 is a SIHD3N50D-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 500V 3A 3.2Ω@2.5A,10V 69W 5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.2Ω@2.5A,10V
  • Power Dissipation (Pd): 69W
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 175pF@100V
  • Total Gate Charge (Qg@Vgs): 12nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.517 grams.

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Full Specifications of SIHD3N50D-E3

Model NumberSIHD3N50D-E3
Model NameVishay Intertech SIHD3N50D-E3
CategoryMOSFETs
BrandVishay Intertech
Description500V 3A 3.2Ω@2.5A,10V 69W 5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.517 grams / 0.018237 oz
Package / CaseTO-252
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)3A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.2Ω@2.5A,10V
Power Dissipation (Pd)69W
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)175pF@100V
Total Gate Charge (Qg@Vgs)12nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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