SIHD4N80E-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHD4N80E-GE3 is a SIHD4N80E-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 800V 4.3A 1.27Ω@2A,10V 69W 4V@250uA 1PCSNChannel DPAK(TO-252AA) MOSFETs ROHS. This product comes in a DPAK(TO-252AA) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 4.3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.27Ω@2A,10V
  • Power Dissipation (Pd): 69W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 622pF@100V
  • Total Gate Charge (Qg@Vgs): 32nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.619 grams.

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Full Specifications of SIHD4N80E-GE3

Model NumberSIHD4N80E-GE3
Model NameVishay Intertech SIHD4N80E-GE3
CategoryMOSFETs
BrandVishay Intertech
Description800V 4.3A 1.27Ω@2A,10V 69W 4V@250uA 1PCSNChannel DPAK(TO-252AA) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.619 grams / 0.021835 oz
Package / CaseDPAK(TO-252AA)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)4.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.27Ω@2A,10V
Power Dissipation (Pd)69W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)622pF@100V
Total Gate Charge (Qg@Vgs)32nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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