SIHF12N50C-E3 by Vishay Intertech – Specifications

Vishay Intertech SIHF12N50C-E3 is a SIHF12N50C-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 500V 12A 555mΩ@10V,4A 36W 5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 12A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 555mΩ@10V,4A
  • Power Dissipation (Pd): 36W
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.375nF@25V
  • Total Gate Charge (Qg@Vgs): 48nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3.03 grams.

More on SIHF12N50C-E3

Full Specifications of SIHF12N50C-E3

Model NumberSIHF12N50C-E3
Model NameVishay Intertech SIHF12N50C-E3
CategoryMOSFETs
BrandVishay Intertech
Description500V 12A 555mΩ@10V,4A 36W 5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:3.030 grams / 0.10688 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)12A
Drain Source On Resistance (RDS(on)@Vgs,Id)555mΩ@10V,4A
Power Dissipation (Pd)36W
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.375nF@25V
Total Gate Charge (Qg@Vgs)48nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SIHF12N50C-E3 With Other 200 Models

Related Models - SIHF12N50C-E3 Alternative

Scroll to Top