SIHFI9N65A-E3 by Vishay Intertech – Specifications

Vishay Intertech SIHFI9N65A-E3 is a SIHFI9N65A-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 650V 8.5A 930mΩ@10V,5.1A 167W 4V@250uA N Channel TO-220F-3 MOSFETs ROHS. This product comes in a TO-220F-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 8.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 930mΩ@10V,5.1A
  • Power Dissipation (Pd): 167W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: N Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.93 grams.

Full Specifications of SIHFI9N65A-E3

Model NumberSIHFI9N65A-E3
Model NameVishay Intertech SIHFI9N65A-E3
CategoryMOSFETs
BrandVishay Intertech
Description650V 8.5A 930mΩ@10V,5.1A 167W 4V@250uA N Channel TO-220F-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.930 grams / 0.103353 oz
Package / CaseTO-220F-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)8.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)930mΩ@10V,5.1A
Power Dissipation (Pd)167W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
TypeN Channel

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