SIHFR120-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHFR120-GE3 is a SIHFR120-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 7.7A 270mΩ@4.6A,10V 4V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS. This product comes in a TO-252AA package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 7.7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 270mΩ@4.6A,10V
  • Power Dissipation (Pd): 2.5W;42W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 360pF@25V
  • Total Gate Charge (Qg@Vgs): 16nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SIHFR120-GE3

Full Specifications of SIHFR120-GE3

Model NumberSIHFR120-GE3
Model NameVishay Intertech SIHFR120-GE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 7.7A 270mΩ@4.6A,10V 4V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252AA
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)7.7A
Drain Source On Resistance (RDS(on)@Vgs,Id)270mΩ@4.6A,10V
Power Dissipation (Pd)2.5W;42W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)360pF@25V
Total Gate Charge (Qg@Vgs)16nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SIHFR120-GE3 With Other 200 Models

Related Models - SIHFR120-GE3 Alternative

Scroll to Top