SIHG33N60EF-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHG33N60EF-GE3 is a SIHG33N60EF-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 600V 33A 98mΩ@16.5A,10V 278W 4V@250uA 1PCSNChannel TO-247AC MOSFETs ROHS. This product comes in a TO-247AC package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 33A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 98mΩ@16.5A,10V
  • Power Dissipation (Pd): 278W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.454nF@100V
  • Total Gate Charge (Qg@Vgs): 155nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 6.3 grams.

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Full Specifications of SIHG33N60EF-GE3

Model NumberSIHG33N60EF-GE3
Model NameVishay Intertech SIHG33N60EF-GE3
CategoryMOSFETs
BrandVishay Intertech
Description600V 33A 98mΩ@16.5A,10V 278W 4V@250uA 1PCSNChannel TO-247AC MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:6.300 grams / 0.222226 oz
Package / CaseTO-247AC
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)33A
Drain Source On Resistance (RDS(on)@Vgs,Id)98mΩ@16.5A,10V
Power Dissipation (Pd)278W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.454nF@100V
Total Gate Charge (Qg@Vgs)155nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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