SIHH11N60E-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHH11N60E-T1-GE3 is a SIHH11N60E-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 600V 11A 114W 339mΩ@5.5A,10V 4V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 11A
  • Power Dissipation (Pd): 114W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 339mΩ@5.5A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.076nF@100V
  • Total Gate Charge (Qg@Vgs): 62nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SIHH11N60E-T1-GE3

Full Specifications of SIHH11N60E-T1-GE3

Model NumberSIHH11N60E-T1-GE3
Model NameVishay Intertech SIHH11N60E-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description600V 11A 114W 339mΩ@5.5A,10V 4V@250uA 1PCSNChannel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)11A
Power Dissipation (Pd)114W
Drain Source On Resistance (RDS(on)@Vgs,Id)339mΩ@5.5A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.076nF@100V
Total Gate Charge (Qg@Vgs)62nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SIHH11N60E-T1-GE3 With Other 200 Models

Related Models - SIHH11N60E-T1-GE3 Alternative

Scroll to Top