SIHH125N60EF-T1GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHH125N60EF-T1GE3 is a SIHH125N60EF-T1GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 600V 23A 156W 125mΩ@12A,10V 5V@250uA 1PCSNChannel PowerPAK(8x8) MOSFETs ROHS. This product comes in a PowerPAK(8x8) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 23A
  • Power Dissipation (Pd): 156W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 125mΩ@12A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.533nF@100V
  • Total Gate Charge (Qg@Vgs): 47nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SIHH125N60EF-T1GE3

Model NumberSIHH125N60EF-T1GE3
Model NameVishay Intertech SIHH125N60EF-T1GE3
CategoryMOSFETs
BrandVishay Intertech
Description600V 23A 156W 125mΩ@12A,10V 5V@250uA 1PCSNChannel PowerPAK(8x8) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK(8x8)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)23A
Power Dissipation (Pd)156W
Drain Source On Resistance (RDS(on)@Vgs,Id)125mΩ@12A,10V
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.533nF@100V
Total Gate Charge (Qg@Vgs)47nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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