Vishay Intertech SIHH14N60EF-T1-GE3 is a SIHH14N60EF-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 600V 15A 147W 266mΩ@7A,10V 4V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 15A
- Power Dissipation (Pd): 147W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 266mΩ@7A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.449nF@100V
- Total Gate Charge (Qg@Vgs): 84nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on SIHH14N60EF-T1-GE3
Full Specifications of SIHH14N60EF-T1-GE3
Model Number | SIHH14N60EF-T1-GE3 |
Model Name | Vishay Intertech SIHH14N60EF-T1-GE3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 600V 15A 147W 266mΩ@7A,10V 4V@250uA 1PCSNChannel - MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | - |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 600V |
Continuous Drain Current (Id) | 15A |
Power Dissipation (Pd) | 147W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 266mΩ@7A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.449nF@100V |
Total Gate Charge (Qg@Vgs) | 84nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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