SIHH20N50E-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHH20N50E-T1-GE3 is a SIHH20N50E-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 500V 22A 174W 147mΩ@10A,10V 4V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 500V
• Continuous Drain Current (Id): 22A
• Power Dissipation (Pd): 174W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 147mΩ@10A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 2.063nF@100V
• Total Gate Charge (Qg@Vgs): 84nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.