SIHH27N60EF-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHH27N60EF-T1-GE3 is a SIHH27N60EF-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 600V 29A 100mΩ@10V,13.5A 202W 4V@250uA 1PCSNChannel PowerPAK MOSFETs ROHS. This product comes in a PowerPAK package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 29A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 100mΩ@10V,13.5A
  • Power Dissipation (Pd): 202W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.609nF@100V
  • Total Gate Charge (Qg@Vgs): 135nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.27 grams.

Full Specifications of SIHH27N60EF-T1-GE3

Model NumberSIHH27N60EF-T1-GE3
Model NameVishay Intertech SIHH27N60EF-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description600V 29A 100mΩ@10V,13.5A 202W 4V@250uA 1PCSNChannel PowerPAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.270 grams / 0.009524 oz
Package / CasePowerPAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)29A
Drain Source On Resistance (RDS(on)@Vgs,Id)100mΩ@10V,13.5A
Power Dissipation (Pd)202W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.609nF@100V
Total Gate Charge (Qg@Vgs)135nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SIHH27N60EF-T1-GE3 With Other 120 Models

Related Models - SIHH27N60EF-T1-GE3 Alternative

Scroll to Top