SIHH28N60E-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHH28N60E-T1-GE3 is a SIHH28N60E-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 600V 29A 202W 98mΩ@14A,10V 5V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

• Drain Source Voltage (Vdss): 600V
• Continuous Drain Current (Id): 29A
• Power Dissipation (Pd): 202W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 98mΩ@14A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 2.614nF@100V
• Total Gate Charge (Qg@Vgs): 129nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.