SIHK075N60EF-T1GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHK075N60EF-T1GE3 is a SIHK075N60EF-T1GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 600V 33A 71mΩ@15A,10V 192W 5V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 33A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 71mΩ@15A,10V
  • Power Dissipation (Pd): 192W
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.954nF@100V
  • Total Gate Charge (Qg@Vgs): 72nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SIHK075N60EF-T1GE3

Full Specifications of SIHK075N60EF-T1GE3

Model NumberSIHK075N60EF-T1GE3
Model NameVishay Intertech SIHK075N60EF-T1GE3
CategoryMOSFETs
BrandVishay Intertech
Description600V 33A 71mΩ@15A,10V 192W 5V@250uA 1PCSNChannel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)33A
Drain Source On Resistance (RDS(on)@Vgs,Id)71mΩ@15A,10V
Power Dissipation (Pd)192W
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.954nF@100V
Total Gate Charge (Qg@Vgs)72nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SIHK075N60EF-T1GE3 With Other 200 Models

Related Models - SIHK075N60EF-T1GE3 Alternative

Scroll to Top