SIHK125N60E-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SIHK125N60E-T1-GE3 is a SIHK125N60E-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 600V 21A 125mΩ@12A,10V 132W 5V@250uA 1PCSNChannel PowerPAK(10x12) MOSFETs ROHS. This product comes in a PowerPAK(10x12) package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 600V
• Continuous Drain Current (Id): 21A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 125mΩ@12A,10V
• Power Dissipation (Pd): 132W
• Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 1.811nF@100V
• Total Gate Charge (Qg@Vgs): 44nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.